www.irf.com 1 01/31/01 IRF7451 smps mosfet hexfet ? power mosfet l high frequency dc-dc converters benefits applications l low gate to drain charge to reduce switching losses l fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) l fully characterized avalanche voltage and current v dss r ds(on) max i d 150v 0.09 w w w w w 3.6a parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 3.6 i d @ t a = 70c continuous drain current, v gs @ 10v 2.9 a i dm pulsed drain current ? 29 p d @t a = 25c power dissipation ? 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt ? 7.9 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes ? through ? are on page 8 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a symbol parameter typ. max. units r q jl junction-to-drain lead CCC 20 r q ja junction-to-ambient ? CCC 50 c/w thermal resistance pd- 93898a
IRF7451 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 3.5 CCC CCC s v ds = 25v, i d = 2.2a q g total gate charge CCC 28 41 i d = 2.2a q gs gate-to-source charge CCC 6.8 10 nc v ds = 120v q gd gate-to-drain ("miller") charge CCC 13 20 v gs = 10v ? t d(on) turn-on delay time CCC 10 CCC v dd = 75v t r rise time CCC 4.2 CCC i d = 2.2a t d(off) turn-off delay time CCC 17 CCC r g = 6.5 w t f fall time CCC 15 CCC v gs = 10v ? c iss input capacitance CCC 990 CCC v gs = 0v c oss output capacitance CCC 220 CCC v ds = 25v c rss reverse transfer capacitance CCC 42 CCC pf ? = 1.0mhz c oss output capacitance CCC 1260 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 100 CCC v gs = 0v, v ds = 120v, ? = 1.0mhz c oss eff. effective output capacitance CCC 180 CCC v gs = 0v, v ds = 0v to 120v ? dynamic @ t j = 25c (unless otherwise specified) ns s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 2.2a, v gs = 0v ? t rr reverse recovery time CCC 76 110 ns t j = 25c, i f = 2.2a q rr reverse recoverycharge CCC 270 400 nc di/dt = 100a/s ? diode characteristics 2.3 29 a static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.19 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.09 w v gs = 10v, i d = 2.2a ? v gs(th) gate threshold voltage 3.0 CCC 5.5 v v ds = v gs , i d = 250a CCC CCC 25 a v ds = 150v, v gs = 0v CCC CCC 250 v ds = 120v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 30v gate-to-source reverse leakage CCC CCC -100 na v gs = -30v i gss i dss drain-to-source leakage current parameter typ. max. units e as single pulse avalanche energy ? CCC 210 mj i ar avalanche current ? CCC 3.6 a avalanche characteristics
IRF7451 www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 i d , drain-to-source current (a) 5.0v 20s pulse width tj = 25c vgs top 15.0v 12.0v 10.0v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , drain-to-source current (a) 5.0v 20s pulse width tj = 150c vgs top 15.0v 12.0v 10.0v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 0.01 0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 3.6a
IRF7451 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 10 20 30 40 0 4 8 12 16 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 2.2a v = 30v ds v = 75v ds v = 120v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1 10 100 1000 operation in this area limited by r ds(on) sin g le pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum safe operating area 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
IRF7451 www.irf.com 5 fig 10. maximum effective transient thermal impedance, junction-to-case 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 i , drain current (a) d fig 9. maximum drain current vs. ambient temperature t a , ambient temperature (c)
IRF7451 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 13a&b. basic gate charge test circuit and waveform fig 14a&b. unclamped inductive test circuit and waveforms fig 14c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - v gs q g q gs q gd v g charge t p v ( br ) dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.6a 2.9a 3.6a 0246810121416 i d , drain current ( a ) 0.070 0.073 0.075 0.078 0.080 0.083 0.085 r ds ( on ) , drain-to-source on resistance ( w ) vgs = 10v 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 v gs, gate -to -source voltage (v) 0.060 0.075 0.090 0.105 0.120 r ds(on) , drain-to -source on resistance ( w ) i d = 2.2a
IRF7451 www.irf.com 7 so-8 package details k x 45 c 8x l 8x q h 0 .25 (.01 0) m a m a 0.10 (.004) b 8x 0.2 5 (.010 ) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3 x dim inc hes m illim e ter s m in m ax m in m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 b asic 1.27 ba sic e1 .025 b asic 0.635 ba sic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. c o n t r o ll in g d im e n s io n : in c h . 3. dimensions are show n in millimeters (inches). 4. o u tl in e c o n f o r m s to je d e c o u tl in e m s -01 2a a . dimension does not include mold protrusions m o ld p r o t r u s io n s n o t to e xc e e d 0.25 (.0 06 ). d im e n s io n s is th e le n g t h o f le a d f o r s o ld e r in g t o a s u b s tr a te .. 5 6 a1 e1 q so-8 part marking
IRF7451 8 www.irf.com ? repetitive rating; pulse width limited by max. junction temperature. ? i sd 2.2a, di/dt 180a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 33mh, r g = 25 w , i as = 3.6a. ? pulse width 400s; duty cycle 2%. ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? when mounted on 1 inch square copper board. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ) . 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/01
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